Stephen O'Leary

Professor

Electrical
Office: EME4279
Phone: 250.807.8091
Email: stephen.oleary@ubc.ca

Graduate student supervisor


Research Summary

Wide band gap III-V semiconductors; Disordered semiconductors; Microelectronic circuits

Courses & Teaching

Microelectronic circuits; Semiconductor devices; Novel electronic materials; Electricity and magnetism; Communications and systems analysis

Biography

Stephen Karrer O’Leary was born in Toronto, Ontario, Canada on June 19, 1965. He received BASc, MSc, and PhD degrees from the University of Toronto in 1988, 1990, and 1995, respectively. He worked as a post-doctoral fellow at the University of Toronto, from the fall of 1995 until the spring of 1996, as a post-doctoral fellow at Hong Kong Baptist University, from the spring of 1996 until the end of 1996, and as a visiting scientist at Rensselaer Polytechnic Institute, from the beginning of 1997 until the fall of 1998. In the fall of 1998, he assumed duties as an Assistant Professor in the Faculty of Engineering at the University of Regina. In 2006, he left the University of Regina in order to assume duties as an Associate Professor in the Department of Electrical and Computer Engineering at the University of Windsor. He then left the University of Windsor in 2008 in order to assume duties as an Associate Professor in the School of Engineering at The University of British Columbia | Okanagan, where he is currently employed. Professor O’Leary is a senior member of the Institute of Electrical and Electronics Engineers. He is also a registered Professional Engineer with both the Association of Professional Engineers and Geoscientists of Saskatchewan (APEGS) and the Association of Professional Engineers and Geoscientists of British Columbia (EGBC).

Degrees

PhD – (Electrical and Computer Engineering) University of Toronto (1995)
MSc – (Physics) University of Toronto (1990)
BASc – (Engineering Science-Electrical Option) University of Toronto (1988)

Research Interests & Projects

  • wide band gap III-V semiconductors
  • disordered semiconductors
  • the optical response of materials
  • novel electron devices
  • solar cells
  • x-ray image detectors
  • large area electronics

Selected Publications & Presentations

  • W.A. Hadi, P. Siddiqua, and S.K. O’Leary, Non-parabolicity and inter-valley transistions within zinc-blende indium nitride, Journal of Materials Science: Materials in Electronics, Volume 25, pages 5524-5534, 2014.
  • W.A. Hadi, M.S. Shur, and S.K. O’Leary, Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: An updated and critical review, Journal of Materials Science: Materials in Electronics, Volume 25, pages 4675-4713, 2014.
  • K.J. Schmidt, Y. Lin, M. Beaudoin, G. Xia, S.K. O’Leary, G. Yue, and B. Yan, The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction, Canadian Journal of Physics, Volume 92, pages 857-861, 2014 – Proceedings for the 25th International Conference of Amorphous and Nanocrystalline Semiconductors.
  • E. Baghani and S.K. O’Leary, Occupation statistics of the 5/7-atom dislocation core structure within n-type indium nitride, Journal of Applied Physics, Volume 114, pages 05305-1-7, 2013.
  • E. Baghani and S.K. O’Leary, An enhancement in the low-field electron mobility associated with a ZnMgO/ZnO heterostructure: The role of a two-dimensional electron gas, Journal of Applied Physics, Volume 114, pages 023703-1-4, 2013.
  • E. Baghani and S.K. O’Leary, A transition in the nature of the occupancy of the dislocation lines within n-type wurtzite gallium nitride, Journal of Applied Physics, Volume 113, pages 163501-1-5, 2013.
  • W.A. Hadi, M.S. Shur, and S.K. O’Leary, On the applicability of a semi-analytical approach to determining the transient electron transport response of gallium arsenide, gallium nitride and zinc oxide, Journal of Materials Science: Materials in Electronics, Volume 24, pages 1624-1634, 2013.
  • W.A. Hadi, P.K. Guram, M.S. Shur, and S.K. O’Leary, Steady-state and transient electron transport within wurtzite and zinc-blende indium nitride, Journal of Applied Physics, Volume 113, pages 113709-1-6, 2013.
  • W.A. Hadi, R. Cheekoori, M.S. Shur, and S.K. O’Leary, Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride, Journal of Materials Science: Materials in Electronics, Volume 24, pages 807-813, 2013.
  • E. Baghani and S.K. O’Leary, Dislocation line charge screening within n-type gallium nitride, Journal of Applied Physics, Volume 113, pages 023709-1-7, 2013.
  • W.A. Hadi, M.S. Shur, and S.K. O’Leary, The sensitivity of the steady-state and transient electron transport within bulk wurtzite zinc oxide to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient, Journal of Materials Science: Materials in Electronics, Volume 24, pages 2-12, 2013.
  • W.A. Hadi, S. Chowdhury, M.S. Shur, and S.K. O’Leary, A detailed characterization of the transient electron transport within zinc oxide, gallium nitride, and gallium arsenide, Journal of Applied Physics, Volume 112, pages123722-1-6, 2012.
  • W.A. Hadi, M.S. Shur, and S.K. O’Leary, A transient electron transport analysis of bulk wurtzite zinc oxide, Journal of Applied Physics, Volume 112, pages 033720-1-5, 2012.

Additional publications

 

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